Vanishing of inhomogeneous spin relaxation in InAs-based field-effect transistor structures

Ohno, Munekazu; Yoh, Kanji

Physical Review B, 2007, 75(24), 241308

Permalink : https://hdl.handle.net/2115/25418

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アクセス権	open access
URI	https://hdl.handle.net/2115/25418
タイトル	Vanishing of inhomogeneous spin relaxation in InAs-based field-effect transistor structures
著者	著者名 Ohno, Munekazu
著者	e-Rad_Researcher 60220539 著者名 Yoh, Kanji
言語	英語
発行日	2007-06-15
出版者	American Physical Society
収録物名	Physical Review B
巻(号)	75(24)
ページ	241308
抄録	The D'yakonov-Perel' spin relaxation process in the (001) InAs quantum well system is studied based on Monte Carlo (MC) simulation. The present space-resolved MC analysis demonstrates that the relaxation of spins oriented in any axes is totally suppressed with equal strength of Rashba and Dresselhaus effects, which is in marked contrast with the spin relaxation anisotropy reported previously in time-resolved analyses. Our calculation also shows a substantial contribution of the cubic term of the wave number vector in the Dresselhaus model onto the spatial spin distribution.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2007 American Physical Society
PISSN	0163-1829
EISSN	1095-3795
関連情報	URI http://www.aps.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1103/PhysRevB.75.241308