Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

Yoh, Kanji; Ohno, Hiroshi; Sueoka, Kazuhisa et al.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004, 22(3), 1432-1435

Permalink : https://hdl.handle.net/2115/28637

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アクセス権
open access
URI
https://hdl.handle.net/2115/28637
タイトル
Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
著者
Yoh, Kanji ; Ohno, Hiroshi ; Sueoka, Kazuhisa ; Ramsteiner, Manfred E.
e-Rad_Researcher
60220539
著者名
Yoh, Kanji
著者名
Ohno, Hiroshi
著者名
Sueoka, Kazuhisa
著者名
Ramsteiner, Manfred E.
言語
英語
発行日
2004-05
出版者
American Vacuum Society
収録物名
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
巻(号)
22(3)
ページ
1432-1435
抄録
We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175 °C clearly suffer from increased reaction and out-diffusion of semiconductor constituents compared to those grown at 23 °C. The lower temperature samples showed an increased degree of spin polarization of 18%–20% which translates to 36%–40% of spin injection efficiency assuming selection rules between heavy and light holes in the p-type InAs substrate. It is close to the spin polarization of 40%–45% in an Fe spin injector itself. ©2004 American Vacuum Society.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
©2004 American Vacuum Society
PISSN
0734-211X
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1116/1.1755711