Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

Hua, Bin; Motohisa, Junichi; Ding, Ying et al.

Applied Physics Letters, 2007, 91(13), 131112

Permalink : https://hdl.handle.net/2115/30183

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アクセス権
open access
URI
https://hdl.handle.net/2115/30183
タイトル
Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
著者
Hua, Bin ; Motohisa, Junichi ; Ding, Ying ; Hara, Shinjiroh ; Fukui, Takashi
著者名
Hua, Bin
e-Rad_Researcher
60212263
著者名
Motohisa, Junichi
著者名
Ding, Ying
e-Rad_Researcher
50374616
著者名
Hara, Shinjiroh
e-Rad_Researcher
30240641
著者名
Fukui, Takashi
言語
英語
発行日
2007-09-24
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
91(13)
ページ
131112
抄録
The authors present the formation of Fabry-Pérot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Pérot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed. ©2007 American Institute of Physics
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PISSN
0003-6951
EISSN
0003-6951
関連情報
URI
http://apl.aip.org/apl/
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.2787895