Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water

Shiozaki, Nanako; Sato, Taketomo; Hashizume, Tamotsu

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 2007, 46(4A), 1471-1473

Permalink : https://hdl.handle.net/2115/33073

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アクセス権
open access
URI
https://hdl.handle.net/2115/33073
タイトル
Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
著者
Shiozaki, Nanako ; Sato, Taketomo ; Hashizume, Tamotsu
著者名
Shiozaki, Nanako
e-Rad_Researcher
50343009
著者名
Sato, Taketomo
e-Rad_Researcher
80149898
著者名
Hashizume, Tamotsu
言語
英語
キーワード
GaN
oxide
electrochemical
anodic oxidation
XPS
発行日
2007-04
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)
46(4A)
ページ
1471-1473
抄録
In this paper, we report on the feasibility of oxidizing n-GaN by an electrochemical process in a mixture containing an aqueous solution of tartaric acid and propylene glycol. Photons generated by UV illumination were supplied at the electrolyte-GaN interface during the oxidation process. In the constant-voltage mode, X-ray photoelectron spectroscopy analysis revealed that relatively thick Ga oxide layer formed on the n-GaN surface. However, the oxide surface was very rough. In addition, we found metallic Ga components in the oxide layer or at the oxide-GaN interface for longer oxidation times. On the other hand, a thin Ga2O3 layer with a smooth surface was grown by a constant-current process.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 2007 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA10457675
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.46.1471