Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto; Kaneko, Masamitsu

Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto et al.

Japanese Journal of Applied Physics. Pt. 2, Letters & express letters, 2006, 45(4-7), L111-L113

Permalink : https://hdl.handle.net/2115/33075

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アクセス権	open access
URI	https://hdl.handle.net/2115/33075
タイトル	Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
著者	Hashizume, Tamotsu ; Kotani, Junji ; Basile, Alberto ; Kaneko, Masamitsu
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
著者名 Kotani, Junji
著者名 Basile, Alberto
著者名 Kaneko, Masamitsu
言語	英語
キーワード	AlGaN
	GaN
	gate leakage current
	tunnel
	surface control
	XPS
発行日	2006-02
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
巻(号)	45(4-7)
ページ	L111-L113
抄録	We proposed a surface control process for suppressing the tunneling leakage of Schottky gates on AlGaN/GaN heterostructures. For the recovery of nitrogen-vacancy-related defects and reduction in the amount of oxygen impurities at the AlGaN surface, the process consisted of nitrogen radical treatment, the deposition of an ultrathin Al layer, UHV annealing and finally the removal of the Al layer. Ni/Au Schottky gates fabricated on processed AlGaN surfaces showed pronounced reduction in leakage current and a clear temperature dependence of I-V characteristics, indicating the effective suppression of tunneling leakage in current transport through AlGaN Schottky interfaces.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Copyright © 2006 The Japan Society of Applied Physics
PISSN	0021-4922
NCID	AA11906093
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.45.L111