Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, Tamotsu

Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko et al.

Japanese Journal of Applied Physics. Pt. 2, Letters & express letters, 2007, 46(10), L224-L226

Permalink : https://hdl.handle.net/2115/33076

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アクセス権	open access
URI	https://hdl.handle.net/2115/33076
タイトル	Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
著者	Kimura, Takeshi ; Ootomo, Shinya ; Nomura, Takehiko ; Yoshida, Seikoh ; Hashizume, Tamotsu
著者名 Kimura, Takeshi
著者名 Ootomo, Shinya
著者名 Nomura, Takehiko
著者名 Yoshida, Seikoh
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
言語	英語
キーワード	doping
	carbon
	diffusion
	GaN
	CN
	SiN
	XPS
	ECR-CVD
発行日	2007-03
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
巻(号)	46(10)
ページ	L224-L226
抄録	We performed a feasibility study on the solid-phase diffusion of carbon into GaN using a SiNx/CNx/GaN structure prepared by electron-cyclotron-resonance-assisted chemical vapor deposition. An X-ray photoelectron spectroscopy study on the CNx layer deposited on GaN showed that its energy positions and spectrum features are very close to those of a C-N bond, and the N composition was estimated to be 24 %, indicating a highly C-rich layer. No degradation in the chemical properties of the GaN surface was found after the diffusion process at 1000 ℃. A secondary ion mass spectrometry result clearly showed a diffusion of carbon into GaN. We also observed an increase in resistivity for the C-diffused GaN layer.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Copyright © 2007 The Japan Society of Applied Physics
PISSN	0021-4922
NCID	AA11906093
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.46.L224