Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires

Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 2002, 41(4B), 2671-2674

Permalink : https://hdl.handle.net/2115/33082

このアイテムのアクセス数:1,959件（2026-04-04 22:08 集計）

閲覧可能ファイル 

ファイル フォーマット サイズ 閲覧回数 説明
kasai pdf 231 KB 1,642

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権
open access
URI
https://hdl.handle.net/2115/33082
タイトル
Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires
著者
Yumoto, Miki ; Kasai, Seiya ; Hasegawa, Hideki
著者名
Yumoto, Miki
e-Rad_Researcher
30312383
著者名
Kasai, Seiya
著者名
Hasegawa, Hideki
言語
英語
キーワード
binary decision diagram (BDD)
quantum wire (QWR)
Schottky wrap gate (WPG)
path switching
発行日
2002-04
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)
41(4B)
ページ
2671-2674
抄録
A novel binary decision diagram (BDD) node device based on wrap-gate (WPG) control of AlGaAs/GaAs nanowires is described and fabricated, and its basic operation is characterized. The node device consists of one entry-nanowire branch and two exit-nanowire branches where each of two exit-branches is switched by a Schottky WPG in a complimentary fashion so as to realize path switching for electrons. Basic branch switches as well as BDD node devices were fabricated on AlGaAs/GaAs nanowires formed by electron beam lithography and wet chemical etching of molecular beam epitaxy (MBE)-grown heterostructures. A detailed analysis of gate control characteristics was carried out by magneto tran sport measurements. A three-dimensional potential simulation showed that Fermi level pinning on the semiconductor free surface should be carefully taken into consideration for accurate device design. The branch-switch exhibited excellent gate control from low temperatures up to room temperature. showing clear conductance quantization at low temperatures, The fabricated BDD node device realized clear path switching from low temperatures up to room temperature.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 2002 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA10457675
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.41.2671