Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas

Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, Hideki

Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas

Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa et al.

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 1997, 36(3B), 1678-1685

Permalink : https://hdl.handle.net/2115/33085

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アクセス権	open access
URI	https://hdl.handle.net/2115/33085
タイトル	Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
著者	Kasai, Seiya ; Jinushi, Kei-ichiroh ; Tomozawa, Hidemasa ; Hasegawa, Hideki
e-Rad_Researcher 30312383 著者名 Kasai, Seiya
著者名 Jinushi, Kei-ichiroh
著者名 Tomozawa, Hidemasa
著者名 Hasegawa, Hideki
言語	英語
キーワード	single electron transistors
	Schottky in-plane gate (IPG)
	Schottky wrap gate (WPG)
	single-quantum dot
	multiple-quantum dot
	Coulomb blockade
発行日	1997-03
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)	36(3B)
ページ	1678-1685
抄録	Single-dot and multiple (2, 3, 18, and 37)-dot single electron transistors (SETs) based on the control of a two-dimensional electron gas (2DEG) with a recently proposed Schottky in-plane gate (IPG) and a newly introduced Schottky wrap gate (WPG) were successfully fabricated on AlGaAs/GaAs wafers using electron beam (EB) lithography and their transport properties were investigated. Each of the fabricated SETs showed Coulomb blockade-like conductance oscillation. In single-dot SETs, a strong correlation was found between the device dimensions and the temperature limit of conductance oscillation. Conductance oscillation characteristics of multiple-dot SETs were complicated, and were not explained by the classical Coulomb blockade theory. Based on a simplified theoretical analysis using computer simulation, it was shown that quantized energy due to electron confinement and dot-coupling can dominate the charging effect in the fabricated SETs.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Copyright © 1997 The Japan Society of Applied Physics
PISSN	0021-4922
NCID	AA10457675
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.36.1678