Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers

Kasai, Seiya; Hasegawa, Hideki

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 1996, 35(2B), 1340-1347

Permalink : https://hdl.handle.net/2115/33087

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アクセス権
open access
URI
https://hdl.handle.net/2115/33087
タイトル
Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
著者
e-Rad_Researcher
30312383
著者名
Kasai, Seiya
著者名
Hasegawa, Hideki
言語
英語
キーワード
lateral surface superlattice
Si interface control layer
Schottky barrier
electron beam induced current
conductance oscillation
発行日
1996-02
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)
35(2B)
ページ
1340-1347
抄録
A novel lateral surface superlattice (LSSL) device structure based on Schottky barrier height (SBH) difference produced by periodic insertion of Si interface control layer (Si ICL) stripes is proposed, fabricated and characterized. Two-dimensional computer simulation was performed first to gain information on basic design considerations. An electron beam induced current (EBIC) study on the fabricated device directly confirmed SBH modulation by Si ICL stripes. The devices showed periodic oscillations of drainconductance and transconductance at low temperatures up to 10K whose behavior was distinctly different from that of previous split-gate devices. The mechanism of these oscillations was explained by a sequential resonant tunneling model. According to a quantitative analysis of the data, SBH difference of 70-150meV was produced at the metalsemiconductor interface and it produced quantized levels with the separation of 2-3meV at heterointerface.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 1996 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA10457675
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.35.1340