The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process

Sato, Taketomo; Kaneshiro, Chinami; Hasegawa, Hideki

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 1999, 38(2B), 1103-1106

Permalink : https://hdl.handle.net/2115/33089

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アクセス権
open access
URI
https://hdl.handle.net/2115/33089
タイトル
The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
著者
Sato, Taketomo ; Kaneshiro, Chinami ; Hasegawa, Hideki
著者名
Sato, Taketomo
著者名
Kaneshiro, Chinami
著者名
Hasegawa, Hideki
言語
英語
キーワード
Schottky barrier
electrochemical process
pulse plating
surface morphology
Pt
InP
SEM
I-V
C-V
DIGS model
発行日
1999-02
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)
38(2B)
ページ
1103-1106
抄録
In order to investigate the correlation between the microstructure of a metal/semiconductor (M/S) interface and the Schottky barrier height (SBH), Pt Schottky contacts were formed on n-type InP by an in situ electrochemical process under various electrochemical conditions; they were then investigated using scanning electron microscopy (SEM), current-voltage (I-V) and capacitance-voltage (C-V) measurements. Electrodeposition resulted in the formation of arrays of nanometer-sized Pt particles whose distribution strongly depended on electrochemical conditions. The SBH values exhibited a strong correlation with the particle distribution, leading to a high SBH value of 0.86 eV under the condition of the most uniform distribution of the smallest particles. The result is discussed from the viewpoint of the disorder-induced gap state (DIGS) model.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 1999 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA10457675
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.38.1103