open access

https://hdl.handle.net/2115/33090

Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes

英語

scanned probe microscope

1999-02

Japan Society of Applied Physics

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers

38(2B)

1147-1152

Using voltammetry, X-ray photoemission spectroscopy (XPS), in situ electrochemical scanning tunneling microscopy (STM), ex situ atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements, electrochemical etching modes for n-InP surfaces were investigated and optimized for uniform and controlled etching in an HCl electrolyte. The voltammograms indicated the presence of active and passive regions. The surfaces obtained in the active region were clean and featureless with an rms roughness of 1.8 nm. On the other hand, the oxide covered surfaces obtained in the passive region were nonuniform and porous. Etching characteristics of the d.c. photo-anodic mode and the pulsed avalanche mode were then investigated and compared. Both modes were found to be highly controllable and produced uniform and clean surfaces, consuming eight holes per molecule of InP. In particular, the pulsed avalanche etching mode realized an extremely high etch depth controllability of 3x10^-5 nm/pulse.

学術雑誌論文

Accepted Manuscript

Copyright © 1999 The Japan Society of Applied Physics

0021-4922

AA10457675