Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition

Sato, Taketomo; Kaneshiro, Chinami; Okada, Hiroshi; Hasegawa, Hideki

Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition

Sato, Taketomo; Kaneshiro, Chinami; Okada, Hiroshi et al.

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 1999, 38(4B), 2448-2452

Permalink : https://hdl.handle.net/2115/33091

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アクセス権	open access
URI	https://hdl.handle.net/2115/33091
タイトル	Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
著者	Sato, Taketomo ; Kaneshiro, Chinami ; Okada, Hiroshi ; Hasegawa, Hideki
著者名 Sato, Taketomo
著者名 Kaneshiro, Chinami
著者名 Okada, Hiroshi
著者名 Hasegawa, Hideki
言語	英語
キーワード	metal dot array
	Schottky contact
	electrochemical process
	electron-beam lithography
	Pt
	InP
	GaAs
	SEM
	AFM
	conductive probe
発行日	1999-04
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)	38(4B)
ページ	2448-2452
抄録	Attempts were made to form regular arrays of size- and position-controlled Pt-dots on GaAs and InP by combining an in situ electrochemical process with the electron beam (EB) lithography. This utilizes the precipitation of Pt nano-particles at the initial stage of electrodeposition. First, electrochemical conditions were optimized in the mode of self-assembled dot array formation on unpatterned substrates. Minimum in-plane dot diameters of 22 nm and 26 nm on GaAs and InP. respectively, were obtained under the optimal pulsed mode. Then, Pt dots were selectively formed on patterned substrates with open circular windows formed by EB lithography, thereby realizing dot-position control. The Pt dot was round to have been deposited at the center of each open window, and the in-plane diameter of the dot could be controlled by the number, width and period of the pulse-waveform applied to substrates. A minimum diameter of 20 nm was realized in windows with a diameter of 100 nm, using a single pulse. Current-voltage (I-V) measurements using an atomic force microscopy (AFM) system with a conductive probe indicated that each Pt dot/n-GaAs contact possessed a high Schottky barrier height of about 1 eV.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Copyright © 1999 The Japan Society of Applied Physics
PISSN	0021-4922
NCID	AA10457675
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.38.2448