Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process

Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi et al.

Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers, 2000, 39(7B), 4609-4615

Permalink : https://hdl.handle.net/2115/33092

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アクセス権
open access
URI
https://hdl.handle.net/2115/33092
タイトル
Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
著者
Sato, Taketomo ; Kasai, Seiya ; Okada, Hiroshi ; Hasegawa, Hideki
著者名
Sato, Taketomo
e-Rad_Researcher
30312383
著者名
Kasai, Seiya
著者名
Okada, Hiroshi
著者名
Hasegawa, Hideki
言語
英語
キーワード
nanometer-sized Schottky contact
I-V characteristics
computer simulation
electrochemical process
SEM
AFM
conductive probe
GaAs
InP
発行日
2000-07
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
巻(号)
39(7B)
ページ
4609-4615
抄録
The current transport characteristics of nanometer-sized Schottky contacts were investigated from theoretical and experimental viewpoints. A theoretical calculation of the three dimensional (3D) potential distributions showed that the potential shape underneath the nano-Schottky contacts was considerably modified by the surface Fermi level pinning on the air exposed free surfaces, producing a saddle point in the potential. The curl ent-voltage (I-V) curves were strongly influenced by this saddle point potential and resulted in nonlinear log I-V characteristics. Experimentally, the Pt nano-particles were selectively formed using the in situ electrochemical process on n-type GaAs and n-type InP substrates patterned using electron-beam (EB) lithography. Their I-V measurements were carried out using an atomic force microscopy (AFM) system equipped with a conductive probe. The log I-V curves of the nano-Schottky contacts showed nonlinear characteristics with large n values of 1.96 for n-GaAs and 1.27 for n-InP and could be very well explained by the theoretical I-V curves considering the "environmental" Fermi level pinning.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 2000 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA10457675
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.39.4609