Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots

Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, Hideki

Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots

Hirano, Tetsuro; Ito, Akira; Sato, Taketomo et al.

Japanese Journal of Applied Physics part 1, Regular papers & short notes, 2002, 41(2B), 977-981

Permalink : https://hdl.handle.net/2115/33093

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アクセス権	open access
URI	https://hdl.handle.net/2115/33093
タイトル	Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
著者	Hirano, Tetsuro ; Ito, Akira ; Sato, Taketomo ; Ishikawa, Fumitaro ; Hasegawa, Hideki
著者名 Hirano, Tetsuro
著者名 Ito, Akira
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
著者名 Ishikawa, Fumitaro
著者名 Hasegawa, Hideki
言語	英語
キーワード	nanopore
	template
	porous InP
	InGaAs
	MBE growth
	PL
	electrochemical anodization
発行日	2002-02
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics part 1, Regular papers & short notes
巻(号)	41(2B)
ページ	977-981
抄録	Attempts were made to optimize the parameters of the electrochemical process to form uniform nanopore arrays and utilize them as templates for molecular beam epitaxy (MBE) growth of InP-based quantum wires and quantum dots. Template parameters such as pore depth, diameter and period were strongly dependent on anodization conditions. In particular, in the pulsed anodization mode, the pore depth could be well controlled in the nanometer range by adjusting the number of the applied pulses. InGaAs MBE growth was attempted using the nanopore templates. Growth of InGaAs in pores occurred at a substantial depth of about 20-60 nm. The measured photoluminescence (PL) spectra had a new peak at about 1.2 eV in addition to the PL emission from the InP substrate and that from the InGaAs top layer. The new peak was tentatively assigned to the peak arising from InGaAs quantum wire arrays embedded in InP pores with a possible alloy composition change.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Copyright © 2002 The Japan Society of Applied Physics
PISSN	0021-4922
NCID	AA10457675
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.41.977