Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki

Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers, 2005, 44(4B), 2487-2491

Permalink : https://hdl.handle.net/2115/33094

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アクセス権
open access
URI
https://hdl.handle.net/2115/33094
タイトル
Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
著者
Sato, Taketomo ; Oikawa, Takeshi ; Hasegawa, Hideki
e-Rad_Researcher
50343009
著者名
Sato, Taketomo
著者名
Oikawa, Takeshi
著者名
Hasegawa, Hideki
言語
英語
キーワード
selective growth
molecular beam epitaxy (MBE)
patterned substrates
GaN
AlGaN
発行日
2005-04
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers
巻(号)
44(4B)
ページ
2487-2491
抄録
The feasibility of the selective molecular beam epitaxy (MBE) growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates is investigated. The detailed studies on growth features have revealed that size-reducing selective growth is possible on mesa patterns having the <11-20>-orientation, but not on those having the <1-100>-orientations. The behavior reflects complex growth kinetics on high-index crystalline facets. The lateral wire width of QWR structures formed selectively on a top mesa can be controlled by adjusting the growth thickness and the initial size of mesa patterns. From cathodoluminescence (CL) measurements, emission from the embedded AlGaN/GaN QWR structure has been clearly identified.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 2005 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA10457675
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.44.2487