Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition

Ogawa, Eri; Hashizume, Tamotsu; Nakazawa, Satoshi et al.

Japanese Journal of Applied Physics. Pt. 2, Letters & express letters, 2007, 46(24), L590-L592

Permalink : https://hdl.handle.net/2115/33899

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アクセス権
open access
URI
https://hdl.handle.net/2115/33899
タイトル
Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition
著者
Ogawa, Eri ; Hashizume, Tamotsu ; Nakazawa, Satoshi ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi
著者名
Ogawa, Eri
e-Rad_Researcher
80149898
著者名
Hashizume, Tamotsu
著者名
Nakazawa, Satoshi
著者名
Ueda, Tetsuzo
著者名
Tanaka, Tsuyoshi
言語
英語
キーワード
SiN
in situ
MOCVD
AlGaN
XPS
surface
potential
発行日
2007-06-25
出版者
Japan Society of Applied Physics
収録物名
Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
巻(号)
46(24)
ページ
L590-L592
抄録
We investigate the chemical and potential-bending characteristics of in situ SiNx/AlGaN interfaces prepared by metal-organic chemical vapor deposition. X-ray photoelectron spectroscopy showed that the in situ SiNx layer had typical chemical binding energies corresponding to the Si-N bonds. The in situ SiNx deposition brought no chemical degradation on the AlGaN surface at the SiNx/AlGaN interface, whereas the ex situ deposition of SiNx by a plasma process induced chemical disorder on the AlGaN surface including a composition change and the formation of interfacial oxides. A significant reduction in the surface band bending was observed on the AlGaN surface after the in situ SiNx passivation, probably due to a decrease in the surface state density.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Copyright © 2007 The Japan Society of Applied Physics
PISSN
0021-4922
NCID
AA11906093
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1143/JJAP.46.L590