Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure

Ooyama, Kimihito; Kato, Hiroki; Miczek, Marcin et al.

Japanese Journal of Applied Physics, 2008, 47(7), 5426-5428

Permalink : https://hdl.handle.net/2115/34646

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アクセス権	open access
URI	https://hdl.handle.net/2115/34646
タイトル	Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
著者	Ooyama, Kimihito ; Kato, Hiroki ; Miczek, Marcin ; Hashizume, Tamotsu
著者名 Ooyama, Kimihito
著者名 Kato, Hiroki
著者名 Miczek, Marcin
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
言語	英語
キーワード	GaN
	MIS
	interface state
	C-V
	C-t
	high temperature
	capture cross section
発行日	2008-07-25
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics
巻(号)	47(7)
ページ	5426-5428
抄録	With a combination of the static capacitance-voltage (C-V) and the capacitance transient (C-t) methods, the interface-state response in an Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300℃. We observed pronounced degradation of the static C-V curves measured at high temperatures, arising from the enhancement of charging/discharging rates of interface states at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C-t results, we estimated the capture cross section of the states to be on the order of 10^[-19]cm^[2].
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	© 2008 The Japan Society of Applied Physics
PISSN	0021-4922
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.47.5426