open access

https://hdl.handle.net/2115/35595

Effect of carbon incorporation on electrical properties of n-type GaN surfaces

英語

2009-01

American Institute of Physics

Journal of Applied Physics

105(1)

014503

We intentionally incorporated carbon into n-GaN by high-temperature annealing of a SiNx/CNx/GaN structure to study the effect of unintentional carbon incorporation on the electrical properties of n-type GaN surfaces. X-ray photoelectron spectroscopy results showed outdiffusion of Ga atoms from the GaN surface during high-temperature annealing even when the SiNx layer was present. The current-voltage characteristics showed a drastic increase in current in the forward and reverse directions of the Schottky diode in the carbon-incorporated sample. They also showed no temperature dependence from 150 to 300 K. The current-voltage curves of the carbon-incorporated samples in the forward and reverse directions could be almost completely reproduced by assuming an exponentially decaying distribution from the surface for shallow donors.

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0021-8979

AA00693547