Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions

Uemura, Tetsuya; Imai, Yosuke; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi

Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions

Uemura, Tetsuya; Imai, Yosuke; Harada, Masanobu et al.

Applied Physics Letters, 2009, 94(18), 182502

Permalink : https://hdl.handle.net/2115/38547

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アクセス権	open access
URI	https://hdl.handle.net/2115/38547
タイトル	Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions
著者	Uemura, Tetsuya ; Imai, Yosuke ; Harada, Masanobu ; Matsuda, Ken-ichi ; Yamamoto, Masafumi
e-Rad_Researcher 20344476 著者名 Uemura, Tetsuya
著者名 Imai, Yosuke
著者名 Harada, Masanobu
e-Rad_Researcher 80360931 著者名 Matsuda, Ken-ichi
e-Rad_Researcher 10322835 著者名 Yamamoto, Masafumi
言語	英語
キーワード	cobalt alloys
	ferromagnetic materials
	gallium arsenide
	III-V semiconductors
	iron alloys
	magnetic anisotropy
	magnetic epitaxial layers
	semiconductor-metal boundaries
	spin-orbit interactions
	tunnelling magnetoresistance
発行日	2009-05-04
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	94(18)
ページ	182502
抄録	Magnetic and transport properties of a fully epitaxial CoFe/n-GaAs junction were investigated. The CoFe film grown on the GaAs showed strong magnetic anisotropy in which uniaxial anisotropy with an easy axis of [11^^-0] dominated with a slight cubic anisotropy having easy axes of [110] and [11^^-0] superimposed. Tunneling anisotropic magnetoresistance (TAMR) was observed at 4.2 K in the CoFe/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [11^^-0] directions in the (001) plane that varied strongly with a bias voltage. The observed TAMR effect can be explained by the anisotropic electronic structure due to Rashba and Dresselhaus spin-orbit interactions. (c) 2009 American Institute of Physics.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in ,Appl. Phys. Lett. 94, 182502 (2009), and may be found at https://dx.doi.org/10.1063/1.3130092
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3130092