Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks

Kasai, Seiya; Asai, Tetsuya

Applied Physics Express, 2008, 1(8), 083001

Permalink : https://hdl.handle.net/2115/38669

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アクセス権	open access
URI	https://hdl.handle.net/2115/38669
タイトル	Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
著者	e-Rad_Researcher 30312383 著者名 Kasai, Seiya
著者	e-Rad_Researcher 00312380 著者名 Asai, Tetsuya
言語	英語
発行日	2008-08-25
出版者	Japan Society of Applied Physics
収録物名	Applied Physics Express
巻(号)	1(8)
ページ	083001
抄録	Investigation of stochastic resonance in GaAs-based nanowire field-effect transistors (FETs) controlled by Schottky wrap gate and their networks is described. When a weak pulse train is given to the gate of the FET operating in a subthreshold region, the correlation between the input-pulse and source-drain current increases by adding input noise. Enhancement of the correlation is observed in a summing network of the FETs. Measured correlation coefficient of the present system can be larger than that in a linear system in the wide range of noise. An analytical model based on the electron motion over a gate-induced potential barrier quantitatively explains the experimental behaviors.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	© 2008 The Japan Society of Applied Physics
PISSN	1882-0778
EISSN	1882-0786
NCID	AA12295133
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/APEX.1.083001