open access

https://hdl.handle.net/2115/38670

Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates

英語

analytical model

2008-06-25

Japan Society of Applied Physics

Japanese Journal of Applied Physics

47(6)

4958-4964

The nonlinear electrical characteristics of GaAs-based three-branch nanowire junction (TBJ) devices having Schottky wrap gates (WPGs) are investigated experimentally and theoretically, focusing on the nonlinear mechanism at room temperature in devices with large dimensions and the improvement of voltage transfer efficiency. Input-output voltage transfer curve, V_out-V_in, is characterized by changing nanowire width, W, temperature, T, and WPG gate voltage, VG, systematically. At room temperature, a bell-shaped V_out-V_in voltage curve is observed even in the device having a nanowire width of 1,500 nm, which is ten times larger than the electron mean free path. With decreasing wire width or temperature, the output curves are sharpened and curvature in the low-input-voltage region increases. The curvature rapidly increases and voltage transfer efficiency, ΔV_out/ΔV_in, approaches unity when VG is decreased into the subthreshold region. A simple and compact model for the nonlinear characteristics in the nonballistic regime is introduced. The rapid change of the curvature and complex curve in the subthreshold region under VG control is due to the switching of the branch condition from resistive to capacitive by depletion underneath the WPG.

学術雑誌論文

Accepted Manuscript

© 2008 The Japan Society of Applied Physics

0021-4922

AA12295836