Magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy

Ito, Shingo; Hara, Shinjiroh; Wakatsuki, Toshitomo; Fukui, Takashi

Magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy

Ito, Shingo; Hara, Shinjiroh; Wakatsuki, Toshitomo et al.

Applied Physics Letters, 2009, 94(24), 243117

Permalink : https://hdl.handle.net/2115/40230

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アクセス権	open access
URI	https://hdl.handle.net/2115/40230
タイトル	Magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy
著者	Ito, Shingo ; Hara, Shinjiroh ; Wakatsuki, Toshitomo ; Fukui, Takashi
著者名 Ito, Shingo
e-Rad_Researcher 50374616 著者名 Hara, Shinjiroh
著者名 Wakatsuki, Toshitomo
e-Rad_Researcher 30240641 著者名 Fukui, Takashi
言語	英語
キーワード	magnetic anisotropy
	magnetic domains
	magnetic force microscopy
	manganese compounds
	nanostructured materials
	spontaneous magnetisation
発行日	2009-06-15
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	94(24)
ページ	243117
抄録	The authors report the buildup fabrication and magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled on partially SiO2-masked GaAs (111)B substrates by selective-area metal-organic vapor phase epitaxy. Magnetic force microscopy reveals that both the symmetric- and anisotropic-shaped nanoclusters show spontaneous magnetization at room temperature. Some of the nanoclusters show a single magnetic domain, in which magnetized directions are along one of the a-axes of NiAs-type MnAs, after the external magnetic fields up to 3500 Gauss are applied in-plane. The magnetic domains are well controlled by introducing both magnetocrystalline and shape magnetic anisotropies in the anisotropic-shaped nanoclusters.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 94, 243117, 2009, and may be found at http://dx.doi.org/10.1063/1.3157275
PISSN	0003-6951
EISSN	1077-3118
NCID	AA00543431
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3157275