Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions

Ishikawa, Takayuki; Liu, Hong-xi; Taira, Tomoyuki et al.

Applied Physics Letters, 2009, 95(23), 232512

Permalink : https://hdl.handle.net/2115/42485

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アクセス権
open access
URI
https://hdl.handle.net/2115/42485
タイトル
Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
著者
Ishikawa, Takayuki ; Liu, Hong-xi ; Taira, Tomoyuki ; Matsuda, Ken-ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi
著者名
Ishikawa, Takayuki
石川, 貴之
著者名
Liu, Hong-xi
刘, 宏喜
著者名
Taira, Tomoyuki
平, 智幸
e-Rad_Researcher
80360931
著者名
Matsuda, Ken-ichi
松田, 健一
e-Rad_Researcher
20344476
著者名
Uemura, Tetsuya
植村, 哲也
e-Rad_Researcher
10322835
著者名
Yamamoto, Masafumi
山本, 眞史
言語
英語
キーワード
antisite defects
cobalt alloys
electrodes
epitaxial layers
Fermi level
ferromagnetic materials
magnesium compounds
manganese alloys
silicon alloys
tunnelling magnetoresistance
発行日
2009-12-07
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
95(23)
ページ
232512
抄録
Fully epitaxial Co2MnSi (CMS)/MgO/CMS magnetic tunnel junctions (MTJs) with various values of Mn composition α in Co2MnαSi electrodes were fabricated and the influence of α on the tunnel magnetoresistance (TMR) characteristics of these MTJs was investigated. MTJs with Mn-rich CMS electrodes showed TMR ratios, up to 1135% at 4.2 K and 236% at room temperature for α = 1.29, exceeding those of MTJs with CMS electrodes having an almost stoichiometric composition. A possible origin of the higher TMR ratios for α beyond 1.0 is a decreased density of gap states existing around the Fermi level in the half-metal gap caused by the suppression of Co_[Mn] antisites, where a Mn site is replaced by a Co atom, for Mn-rich CMS electrodes.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 95, 232512 (2009) and may be found at https://dx.doi.org/10.1063/1.3272926
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.3272926