open access

https://hdl.handle.net/2115/42634

Effects of breathing and oblong mode phonons on transport properties in a single-electron transistor

英語

single electron device

2010-02-17

IOP Publishing

Journal of Physics : Condensed Matter

22(6)

065301

We investigate theoretically the transport characteristics of a single electron transistor affected by the dynamic deformation of the device configuration due to phonons. By considering changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor, we formulate the electron-phonon interaction peculiar to the device and derive its transport properties by means of the master equation. For a single electron transistor with a gold nano particle island of radius 1 nm, we demonstrate the contribution to the transport properties that originates from tunneling channels associated with THz phonon emission and absorption.

学術雑誌論文

Accepted Manuscript

This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics : Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at http://dx.doi.org/10.1088/0953-8984/22/6/065301.

0953-8984