Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network

Kasai, Seiya; Miura, Kensuke; Shiratori, Yuta

Applied Physics Letters, 2010, 96(19), 194102

Permalink : https://hdl.handle.net/2115/43100

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アクセス権
open access
URI
https://hdl.handle.net/2115/43100
タイトル
Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network
著者
Kasai, Seiya ; Miura, Kensuke ; Shiratori, Yuta
著者名
Kasai, Seiya
著者名
Miura, Kensuke
著者名
Shiratori, Yuta
言語
英語
キーワード
field effect transistor circuits
gallium arsenide
III-V semiconductors
nanowires
semiconductor quantum wires
stochastic processes
summing circuits
発行日
2010-05-10
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
96(19)
ページ
194102
抄録
Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network's response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 194102 (2010) and may be found at https://dx.doi.org/10.1063/1.3428784
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.3428784