Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells

Sato, Taketomo; Yoshizawa, Naoki; Hashizume, Tamotsu

Thin Solid Films, 2010, 518(15), 4399-4402

Permalink : https://hdl.handle.net/2115/43140

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アクセス権	open access
URI	https://hdl.handle.net/2115/43140
タイトル	Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
著者	Sato, Taketomo ; Yoshizawa, Naoki ; Hashizume, Tamotsu
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
著者名 Yoshizawa, Naoki
著者名 Hashizume, Tamotsu
言語	英語
キーワード	Indium phosphide
	Porous structure
	Surface reflectance
	Photoelectrochemical solar cell
発行日	2010-05-31
出版者	Elsevier B.V.
収録物名	Thin Solid Films
巻(号)	518(15)
ページ	4399-4402
抄録	Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0040-6090
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.tsf.2010.02.029