Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions

Uemura, Tetsuya; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi

Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions

Uemura, Tetsuya; Harada, Masanobu; Matsuda, Ken-ichi et al.

Applied Physics Letters, 2010, 96(25), 252106

Permalink : https://hdl.handle.net/2115/43204

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アクセス権	open access
URI	https://hdl.handle.net/2115/43204
タイトル	Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions
著者	Uemura, Tetsuya ; Harada, Masanobu ; Matsuda, Ken-ichi ; Yamamoto, Masafumi
e-Rad_Researcher 20344476 著者名 Uemura, Tetsuya
著者名 Harada, Masanobu
著者名 Matsuda, Ken-ichi
著者名 Yamamoto, Masafumi
言語	英語
キーワード	cobalt alloys
	electric field effects
	ferromagnetic materials
	gallium arsenide
	III-V semiconductors
	iron alloys
	manganese alloys
	semiconductor heterojunctions
	semiconductor-metal boundaries
	silicon alloys
	spin-orbit interactions
	tunnelling magnetoresistance
発行日	2010-06-21
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	96(25)
ページ	252106
抄録	A strong voltage-dependent tunneling anisotropic magnetoresistance (TAMR) effect was observed in a fully epitaxial Co2MnSi/n-GaAs junction and a Co50Fe50/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [11ˉ0] directions in the (001) plane. The voltage at which the TAMR effect was suppressed was close to that at which the differential conductance reached a minimum in both samples, suggesting that the strength and/or the sign of the internal electric field at the Co2MnSi/n-GaAs and Co50Fe50/n-GaAs junctions could be related to the voltage-dependent TAMR effect through spin-orbit interaction.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 252106 (2010) and may be found at https://dx.doi.org/10.1063/1.3456558
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3456558