STM studies on the reconstruction of the Ni2P (101[-]0) surface

Guo, Donghui; Nakagawa, Yuta; Ariga, Hiroko et al.

Surface Science, 2010, 604(17-18), 1347-1352

Permalink : https://hdl.handle.net/2115/43798

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アクセス権
open access
URI
https://hdl.handle.net/2115/43798
タイトル
STM studies on the reconstruction of the Ni2P (101[-]0) surface
著者
Guo, Donghui ; Nakagawa, Yuta ; Ariga, Hiroko ; Suzuki, Shushi ; Kinoshita, Kumiko ; Miyamoto, Takeshi ; Takakusagi, Satoru ; Asakura, Kiyotaka ; Otani, Shigeki ; Oyama, S. Ted
著者名
Guo, Donghui
著者名
Nakagawa, Yuta
著者名
Ariga, Hiroko
著者名
Suzuki, Shushi
著者名
Kinoshita, Kumiko
著者名
Miyamoto, Takeshi
e-Rad_Researcher
30359484
著者名
Takakusagi, Satoru
著者名
Asakura, Kiyotaka
著者名
Otani, Shigeki
著者名
Oyama, S. Ted
言語
英語
キーワード
Nickel phosphide
Scanning tunneling microscopy
Surface relaxation and reconstruction
Density functional calculations
Low index single crystal surfaces
発行日
2010-08-30
出版者
Elsevier B.V.
収録物名
Surface Science
巻(号)
604(17-18)
ページ
1347-1352
抄録
The surface structure of Ni2P (101[-]0), a model for highly active hydrodesulfurization catalysts, was studied using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) in order to understand the reconstruction of the surface layers. Annealing at 573 K revealed a (1 x 1) LEED pattern which changed to a c(2 x 4) arrangement by further heating to 723 K. Atomic scale STM images were obtained for both the (1 x 1) and c(2 x 4) structures. Bright spots observed in the STM images were interpreted to be due to surface phosphorus atoms and this was supported by a density functional theory (DFT) simulation. Several possible models for the c(2 x 4) reconstructed structures were proposed including a P-dimer defect model, a missing-row model and a missing-row + added row model. The last model gave the best explanation for the c(2 x 4) structure. The mechanism for the c(2 x 4) reconstruction on the Ni2P (101[-]0) surface is discussed.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
0039-6028
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1016/j.susc.2010.03.024