Structure of GaAs(1̅ 1̅ 1̅ ) under Ga-rich conditions: A √19×√19 reconstruction model

Koga, Hiroaki

Physical review. B, Condensed matter and materials physics, 2010, 82(11), 113301-1-113301-4

Permalink : https://hdl.handle.net/2115/43828

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アクセス権	open access
URI	https://hdl.handle.net/2115/43828
タイトル	Structure of GaAs(1̅ 1̅ 1̅ ) under Ga-rich conditions: A √19×√19 reconstruction model
著者	著者名 Koga, Hiroaki
言語	英語
キーワード	PACS=68.35.B-
	PACS=61.46.Km
	PACS=61.72.Nn
	PACS=61.72.uj
発行日	2010-09
出版者	American Physical Society
収録物名	Physical review. B, Condensed matter and materials physics
巻(号)	82(11)
ページ	113301-1-113301-4
抄録	A GaAs(1̅ 1̅ 1̅ ) √19×√19 reconstruction model that is almost consistent with the electron-counting (EC) rule was developed. This model differs from earlier hexagonal-ring models by three As atoms surrounding the ring and an As atom filling its center. First-principles calculations found that the model is more stable than the earlier non-EC models and is consistent with the hexagonal-ring patterns observed by scanning-tunneling microscopy. The applicability of the EC rule was thus reconfirmed. The stacking fault energy of the reconstruction was also calculated and found to be much higher than that of the 2×2 reconstruction. The Ga-rich conditions that stabilize the √19×√19 reconstruction are therefore expected to suppress stacking faults in GaAs.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	© 2010 American Physical Society
NCID	AA11187113
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1103/PhysRevB.82.113301