Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Kiyono, Hajime; Sakai, Toshiki; Takahashi, Mari et al.

Journal of Crystal Growth, 2010, 312(19), 2823-2827

Permalink : https://hdl.handle.net/2115/44033

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アクセス権	open access
URI	https://hdl.handle.net/2115/44033
タイトル	Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3
著者	Kiyono, Hajime ; Sakai, Toshiki ; Takahashi, Mari ; Shimada, Shiro
著者名 Kiyono, Hajime
著者名 Sakai, Toshiki
著者名 Takahashi, Mari
著者名 Shimada, Shiro
言語	英語
キーワード	Growth models
	Growth from vapor
	Nitrides
発行日	2010-09-15
出版者	Elsevier B.V.
収録物名	Journal of Crystal Growth
巻(号)	312(19)
ページ	2823-2827
抄録	Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650℃, followed by decomposition of GaN at ∼1100℃. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800-1000℃. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface, and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0022-0248
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.jcrysgro.2010.06.021