A1-μW 600-ppm/℃ Current Reference Circuit Consisting of Subthreshold CMOS Circuits

Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

A1-μW 600-ppm/℃ Current Reference Circuit Consisting of Subthreshold CMOS Circuits

Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya et al.

IEEE Transactions on Circuits and Systems II : Express Briefs, 2010, 57(9), 681-685

Permalink : https://hdl.handle.net/2115/44205

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アクセス権	open access
URI	https://hdl.handle.net/2115/44205
タイトル	A1-μW 600-ppm/℃ Current Reference Circuit Consisting of Subthreshold CMOS Circuits
著者	Ueno, Ken ; Hirose, Tetsuya ; Asai, Tetsuya ; Amemiya, Yoshihito
著者名 Ueno, Ken
著者名 Hirose, Tetsuya
e-Rad_Researcher 00312380 著者名 Asai, Tetsuya
e-Rad_Researcher 80250489 著者名 Amemiya, Yoshihito
言語	英語
キーワード	Complementary metal-oxide-semiconductor (CMOS)
	current reference
	power-aware large-scale integrations (LSIs)
	self-biasing circuit
	subthreshold region
	temperature dependence
	ultralow power
	weak inversion
発行日	2010-09
出版者	IEEE: Institute of Electrical and Electronics Engineers
収録物名	IEEE Transactions on Circuits and Systems II : Express Briefs
巻(号)	57(9)
ページ	681-685
抄録	A low-power CMOS current reference circuit was developed using a 0.35-μm standard CMOS process technology. The circuit consists of MOSFET circuits operating in the subthreshold region and uses no resistors. It compensates for the temperature effect on mobility μ and threshold voltage V_[TH] of MOSFETs and generates a reference current that is insensitive to temperature and supply voltage. Theoretical analyses and experimental results showed that the circuit generates a stable reference current of 100 nA. The temperature coefficient of the current was 520 ppm/℃ at best and 600 ppm/℃ on average in the range of 0 ℃-80 ℃. The line regulation was 0.2%/V in a supply voltage range of 1.8-3 V. The power dissipation was 1μW, and the chip area was 0.015 mm2. Our circuit would be suitable for use in subthreshold-operated power-aware large-scale integrations.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	© 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
PISSN	1549-7747
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1109/TCSII.2010.2056051