Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions

Uemura, Tetsuya; Harada, Masanobu; Akiho, Takafumi et al.

Applied Physics Letters, 2011, 98(10), 102503

Permalink : https://hdl.handle.net/2115/45102

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アクセス権
open access
URI
https://hdl.handle.net/2115/45102
タイトル
Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions
著者
Uemura, Tetsuya ; Harada, Masanobu ; Akiho, Takafumi ; Matsuda, Ken-ichi ; Yamamoto, Masafumi
著者名
Uemura, Tetsuya
著者名
Harada, Masanobu
著者名
Akiho, Takafumi
著者名
Matsuda, Ken-ichi
著者名
Yamamoto, Masafumi
言語
英語
発行日
2011-03-07
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
98(10)
ページ
102503
抄録
An epitaxial Co50Fe50 layer was grown on As-terminated or Ga-terminated GaAs, and the influence of the termination species on both uniaxial-type tunneling anisotropic magnetoresistance (TAMR) characteristics and magnetocrystalline anisotropy was investigated. The magnetocrystalline anisotropy induced in the Co50Fe50 thin film was strongly dependent on the termination species of the GaAs surface, while the TAMR characteristics were almost unchanged. These experimental findings suggest that the TAMR effect is due to the anisotropy of electronic structure rather than the structural anisotropy.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 102503 (2011) and may be found at https://dx.doi.org/10.1063/1.3561759
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.3561759