Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy

Lu, X. M.; Izumi, Y.; Koyama, M.; Nakata, Y.; Adachi, S.; Muto, S.

Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy

Lu, X. M.; Izumi, Y.; Koyama, M. et al.

Journal of Crystal Growth, 2011, 322(1), 6-9

Permalink : https://hdl.handle.net/2115/45603

このアイテムのアクセス数:988件（2026-02-07 16:43 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
JCG322-1_6-9	pdf	4.24 MB	1,231

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/45603
タイトル	Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy
著者	Lu, X. M. ; Izumi, Y. ; Koyama, M. ; Nakata, Y. ; Adachi, S. ; Muto, S.
著者名 Lu, X. M.
著者名 Izumi, Y.
著者名 Koyama, M.
著者名 Nakata, Y.
著者名 Adachi, S.
著者名 Muto, S.
言語	英語
キーワード	Reflection high-energy electron diffraction
	Atomic force microscopy
	Quantum dots
	Molecular beam epitaxy
	Semiconducting III-V materials
発行日	2011-05-01
出版者	Elsevier B.V.
収録物名	Journal of Crystal Growth
巻(号)	322(1)
ページ	6-9
抄録	The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied, with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and size were found to be quite similar to those of InAs QDs on GaAs. The effect of coverage, however, was different. Although the density was relatively high as compared to that of InAs QDs, it was reduced to 1 x 10^[10] cm^[-2] under an optimized condition. This density is compatible with single QD spectroscopy with the help of a certain nanofabrication technique for areal restriction.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0022-0248
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.jcrysgro.2011.02.034