Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlattices

Koga, T.; Sun, X.; Cronin, S. B. et al.

Applied Physics Letters, 1998, 73(20), 2950-2952

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アクセス権
open access
URI
https://hdl.handle.net/2115/45770
タイトル
Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlattices
著者
Koga, T. ; Sun, X. ; Cronin, S. B. ; Dresselhaus, M. S.
著者名
Koga, T.
著者名
Sun, X.
著者名
Cronin, S. B.
著者名
Dresselhaus, M. S.
言語
英語
キーワード
Gallium arsenide
Aluminium compounds
III-V semiconductors
Semiconductor superlattices
Semiconductor quantum wells
Carrier density
Thermoelectricity
Seebeck effect
Brillouin zones
発行日
1998-11-16
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
73(20)
ページ
2950-2952
抄録
A large enhancement in the thermoelectric figure of merit for the whole superlattice, Z3DT, is predicted for short-period GaAs/AlAs superlattices relative to bulk GaAs. Various superlattice parameters (superlattice growth direction, superlattice period, and layer thicknesses) are explored to optimize Z3DT, including quantum well states formed from carrier pockets at various high symmetry points in the Brillouin zone. The highest room-temperature Z3DT obtained in the present calculation is 0.41 at the optimum carrier concentration for either (001)- or (111)-oriented GaAs (20 Å)/AlAs (20 Å) superlattices, which is about 50 times greater than the corresponding ZT for bulk GaAs. © 1998 American Institute of Physics.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 73, 2950 (1998) and may be found at https://dx.doi.org/10.1063/1.122640
PISSN
0003-6951
EISSN
1077-3118
NCID
AA00543431
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.122640