閲覧可能ファイル 

ファイル	フォーマット	サイズ	閲覧回数	説明
APL98-26_262505	pdf	425 KB	1,444

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/46842
タイトル	Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
著者	Li, Gui-fang ; Taira, Tomoyuki ; Matsuda, Ken-ichi ; Arita, Masashi ; Uemura, Tetsuya ; Yamamoto, Masafumi
著者名 Li, Gui-fang
著者名 Taira, Tomoyuki
著者名 Matsuda, Ken-ichi
著者名 Arita, Masashi
著者名 Uemura, Tetsuya
著者名 Yamamoto, Masafumi
言語	英語
キーワード	cobalt alloys
	electron beam deposition
	elemental semiconductors
	epitaxial growth
	germanium
	magnesium compounds
	magnetisation
	manganese alloys
	metallic thin films
	MIS structures
	semiconductor growth
	silicon alloys
	sputter deposition
発行日	2011-06-27
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	98(26)
ページ	262505
抄録	We prepared Heusler alloy Co2MnSi/MgO heterostructures on single-crystal Ge(001) substrates through magnetron sputtering for Co2MnSi and electron beam evaporation for MgO as a promising candidate for future generation spin-based functional devices. Structural investigations showed that the Co2MnSi/MgO heterostructure was grown epitaxially on a Ge(001) substrate with extremely smooth and abrupt interfaces and showed the L2_[1] structure for the Co2MnSi film. Furthermore, a sufficiently high saturation magnetization (μs) value of 5.1 μB/f.u. at 10 K, which is close to the theoretically predicted μs of 5.0 μB/f.u. for half-metallic Co2MnSi, was obtained for prepared Co2MnSi films.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 262505 (2011) and may be found at https://dx.doi.org/10.1063/1.3605675
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3605675

ホームへ戻る