open access

https://hdl.handle.net/2115/47086

Gate voltage dependence of a single-electron transistor using the shuttle mechanism

英語

2001-12

American Physical Society

Physical Review B

65(3)

035403

The gate voltage dependence of a single-electron transistor using the shuttle mechanism in which a vibrating conductive nanoparticle carries charges between the electrodes is studied theoretically and with numerical simulations. Two types of gate voltage effect on the transport properties are demonstrated: one is direct modulation of the current via modification in the tunneling rate, giving rise to shift of ] I/]V peaks on the step-like current, splitting of the current steps and periodic behavior of the current with the change in gate voltage. Another is an indirect effect due to a shift in the range of the nanoparticle vibration induced by the gate voltage. The latter effect stops the shuttle mechanism at a large gate voltage, leading to the conduction gap which widens in proportion to the gate voltage.

学術雑誌論文

Version of Record

© 2001 The American Physical Society

0163-1829

1095-3795