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アクセス権	open access
URI	https://hdl.handle.net/2115/48288
タイトル	Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching
著者	Sato, Taketomo ; Yoshizawa, Naoki ; Okazaki, Hiroyuki ; Hashizume, Tamotsu
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
著者名 Yoshizawa, Naoki
著者名 Okazaki, Hiroyuki
著者名 Hashizume, Tamotsu
言語	英語
発行日	2010
出版者	The Electrochemical Society
収録物名	ECS Transactions
巻(号)	25(42)
ページ	83-88
抄録	Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained from a sample after the irregular top layer was completely removed. Large anodic photocurrents were obtained on the InP porous structures that had low reflectance surfaces with deeper pores.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	© The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans., 25(42), pp. 83-88.
PISSN	1938-5862
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1149/1.3416205

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