Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy

Kohashi, Yoshinori; Sato, Takuya; Ikejiri, Keitaro; Tomioka, Katsuhiro; Hara, Shinjiroh; Motohisa, Junichi

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy

Kohashi, Yoshinori; Sato, Takuya; Ikejiri, Keitaro et al.

Journal of Crystal Growth, 2012, 338(1), 47-51

Permalink : https://hdl.handle.net/2115/48549

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アクセス権	open access
URI	https://hdl.handle.net/2115/48549
タイトル	Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy
著者	Kohashi, Yoshinori ; Sato, Takuya ; Ikejiri, Keitaro ; Tomioka, Katsuhiro ; Hara, Shinjiroh ; Motohisa, Junichi
著者名 Kohashi, Yoshinori
著者名 Sato, Takuya
著者名 Ikejiri, Keitaro
e-Rad_Researcher 60519411 著者名 Tomioka, Katsuhiro
著者名 Hara, Shinjiroh
著者名 Motohisa, Junichi
言語	英語
キーワード	Nanostructures
	Metal-organic vapor phase epitaxy
	Selective epitaxy
	Semiconducting III-V materials
	Semiconducting ternary compounds
発行日	2012-01-01
出版者	Elsevier B.V.
収録物名	Journal of Crystal Growth
巻(号)	338(1)
ページ	47-51
抄録	Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and its growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0022-0248
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.jcrysgro.2011.10.041