Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate

Kim, Hyo Jin; Mothohisa, Junichi; Fukui, Takashi

Nanoscale Research Letters, 2012, 7, 104

Permalink : https://hdl.handle.net/2115/49093

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アクセス権	open access
URI	https://hdl.handle.net/2115/49093
タイトル	Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate
著者	Kim, Hyo Jin ; Mothohisa, Junichi ; Fukui, Takashi
著者名 Kim, Hyo Jin
著者名 Mothohisa, Junichi
e-Rad_Researcher 30240641 著者名 Fukui, Takashi
言語	英語
発行日	2012-02-06
出版者	Springer
収録物名	Nanoscale Research Letters
巻(号)	7
ページ	104
抄録	The optical properties of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO2-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In0.8Ga0.2As SAQDs grown on SiO2-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In0.8Ga0.2As SAQDs selectively grown by utilizing SiO2-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Creative Commons Attribution 2.0 Generic
PISSN	1931-7573
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1186/1556-276X-7-104