Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors

Funahashi, Masahiro; Zhang, Fapei; Tamaoki, Nobuyuki

IEICE Transactions on Electronics, 2011, E94-C(11), 1720-1726

Permalink : https://hdl.handle.net/2115/49110

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ToEe94c-11_1720-1726	pdf	3.08 MB	1,214

アクセス権	open access
URI	https://hdl.handle.net/2115/49110
タイトル	Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors
著者	Funahashi, Masahiro ; Zhang, Fapei ; Tamaoki, Nobuyuki
著者名 Funahashi, Masahiro
著者名 Zhang, Fapei
e-Rad_Researcher 00344218 著者名 Tamaoki, Nobuyuki
言語	英語
キーワード	liquid-crystalline semiconductor
	field-effect transistor
	carrier transport
	field-effect mobility
	phenylterthiophene
発行日	2011-11-01
出版者	Institute of Electronics, Information and Communication Engineers
収録物名	IEICE Transactions on Electronics
巻(号)	E94-C(11)
ページ	1720-1726
抄録	Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10^[-2] cm2V^[-1]s^[-1]. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350 K for 3-TTPPh-5.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2011 The Institute of Electronics, Information and Communication Engineers
PISSN	0916-8524
関連情報	URI http://search.ieice.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1587/transele.E94.C.1720