The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

Kaiju, Hideo; Kondo, Kenji; Ono, Akito; Kawaguchi, Nobuyoshi; Won, Jonghan; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko; Ishibashi, Akira

The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

Kaiju, Hideo; Kondo, Kenji; Ono, Akito et al.

Nanotechnology, 2010, 21(1), 015301

Permalink : https://hdl.handle.net/2115/49333

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アクセス権	open access
URI	https://hdl.handle.net/2115/49333
タイトル	The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics
著者	Kaiju, Hideo ; Kondo, Kenji ; Ono, Akito ; Kawaguchi, Nobuyoshi ; Won, Jonghan ; Hirata, Akihiko ; Ishimaru, Manabu ; Hirotsu, Yoshihiko ; Ishibashi, Akira
e-Rad_Researcher 70396323 著者名 Kaiju, Hideo
e-Rad_Researcher 50360946 著者名 Kondo, Kenji
著者名 Ono, Akito
著者名 Kawaguchi, Nobuyoshi
著者名 Won, Jonghan
著者名 Hirata, Akihiko
著者名 Ishimaru, Manabu
著者名 Hirotsu, Yoshihiko
著者名 Ishibashi, Akira
言語	英語
発行日	2010-01-08
出版者	IOP Publishing
収録物名	Nanotechnology
巻(号)	21(1)
ページ	015301
抄録	Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate (PEN) substrates with their edges crossing have been fabricated and its current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was made without the use of electron-beam or optical lithography, is as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of modified Anderson model. The calculated results also predict a high switching ratio in excess of 100000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at 10.1088/0957-4484/21/1/015301
PISSN	0957-4484
関連情報	PMID 19946173
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1088/0957-4484/21/1/015301