Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique

Hazu, K.; Chichibu, S. F.; Adachi, S.; Sota, T.

Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique

Hazu, K.; Chichibu, S. F.; Adachi, S. et al.

Journal of Applied Physics, 2012, 111(9), 093522

Permalink : https://hdl.handle.net/2115/49402

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アクセス権	open access
URI	https://hdl.handle.net/2115/49402
タイトル	Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique
著者	Hazu, K. ; Chichibu, S. F. ; Adachi, S. ; Sota, T.
著者名 Hazu, K.
著者名 Chichibu, S. F.
e-Rad_Researcher 10221722 著者名 Adachi, S.
著者名 Sota, T.
言語	英語
キーワード	excitons
	III-VI semiconductors
	multiwave mixing
	valence bands
	wide band gap semiconductors
	zinc compounds
発行日	2012-05-01
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	111(9)
ページ	093522
抄録	Spectroscopic and temporal four-wave-mixing (FWM) measurements are carried out on a strain-free bulk ZnO single crystal, in order to clarify the valence-band-ordering. Under the collinearly polarized lights with the electric-field component parallel to the c-axis, which can excite dipole-allowed Γ1-excitons, the FWM signal appears only in the energies corresponding to the B-exciton. Under the cross-linear polarization configuration exciting both Γ5- and Γ1-excitons, the FWM signal arising from the two-photon-coherence is absent in the energies corresponding to A-exciton. Both the results indicate that Γ1-exciton state belongs exclusively to B-exciton, meaning that the valence-band ordering is Γ9 - Γ7 - Γ7 in order of decreasing electron energy for the present strain-free ZnO single crystal.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 111, 093522 (2012) and may be found at https://dx.doi.org/10.1063/1.4711103
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4711103