Resistance switching properties of molybdenum oxide films

Arita, M.; Kaji, H.; Fujii, T. et al.

Thin Solid Films, 2012, 520(14), 4762-4767

Permalink : https://hdl.handle.net/2115/49517

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アクセス権	open access
URI	https://hdl.handle.net/2115/49517
タイトル	Resistance switching properties of molybdenum oxide films
著者	Arita, M. ; Kaji, H. ; Fujii, T. ; Takahashi, Y.
e-Rad_Researcher 20222755 著者名 Arita, M.
著者名 Kaji, H.
著者名 Fujii, T.
著者名 Takahashi, Y.
言語	英語
キーワード	Resistance switching memory
	ReRAM
	Non-volatile memory
	MoO3
	Binary metal oxide
発行日	2012-05-01
出版者	Elsevier B.V.
収録物名	Thin Solid Films
巻(号)	520(14)
ページ	4762-4767
抄録	Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600℃ were composed of MoO3 and were switchable. Current-to-voltage curves, which were measured in air at room temperature by using a Pt-Ir probe as the top electrode, indicated the yielding of both the monopolar and bipolar switching properties. The resistance on-off ratio was between 10 and 10^[2].
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0040-6090
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.tsf.2011.10.174