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アクセス権	open access
URI	https://hdl.handle.net/2115/49528
タイトル	Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
著者	Akazawa, M. ; Matsuyama, T. ; Hashizume, T. ; Hiroki, M. ; Yamahata, S. ; Shigekawa, N.
e-Rad_Researcher 30212400 著者名 Akazawa, M.
著者名 Matsuyama, T.
著者名 Hashizume, T.
著者名 Hiroki, M.
著者名 Yamahata, S.
著者名 Shigekawa, N.
言語	英語
キーワード	aluminium compounds
	atomic force microscopy
	binding energy
	conduction bands
	gallium compounds
	III-V semiconductors
	indium compounds
	MOCVD
	semiconductor epitaxial layers
	semiconductor growth
	semiconductor heterojunctions
	valence bands
	vapour phase epitaxial growth
	wide band gap semiconductors
	X-ray photoelectron spectra
発行日	2010-03-29
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	96(13)
ページ	132104
抄録	The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy and angle-resolved XPS indicated that a thin In0.17Al0.83N (2.5 nm) layer was successfully grown by MOVPE on GaN. The XPS result showed that the valence band offset was 0.2 ± 0.3 eV. This result indicates that the conduction-band offset at the In0.17Al0.83N/GaN interface is large, i.e., 0.9 to 1.0 eV, and occupies a large part of the entire band discontinuity.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 132104 (2010) and may be found at https://dx.doi.org/10.1063/1.3368689
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3368689

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