Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

Shin, S. J.; Jung, C. S.; Park, B. J.; Yoon, T. K.; Lee, J. J.; Kim, S. J.; Choi, J. B.; Takahashi, Y.; Hasko, D. G.

Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

Shin, S. J.; Jung, C. S.; Park, B. J. et al.

Applied Physics Letters, 2010, 97(10), 103101

Permalink : https://hdl.handle.net/2115/49549

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アクセス権	open access
URI	https://hdl.handle.net/2115/49549
タイトル	Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature
著者	Shin, S. J. ; Jung, C. S. ; Park, B. J. ; Yoon, T. K. ; Lee, J. J. ; Kim, S. J. ; Choi, J. B. ; Takahashi, Y. ; Hasko, D. G.
著者名 Shin, S. J.
著者名 Jung, C. S.
著者名 Park, B. J.
著者名 Yoon, T. K.
著者名 Lee, J. J.
著者名 Kim, S. J.
著者名 Choi, J. B.
e-Rad_Researcher 90374610 著者名 Takahashi, Y.
著者名 Hasko, D. G.
言語	英語
キーワード	Coulomb blockade
	diamond
	island structure
	single electron transistors
発行日	2010-09-06
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	97(10)
ページ	103101
抄録	An ultrasmall single-electron transistor has been made by scaling the size of a fin field-effect transistor structure down to an ultimate limiting form, resulting in the reliable formation of a sub-5 nm Coulomb island. The charge stability data feature the first exhibition of three and a half clear Coulomb diamonds at 300 K, each showing a high peak-to-valley current ratio. Its charging energy is estimated to be more than one order magnitude larger than the thermal energy at room-temperature. The hybrid literal gate integrated by this single-electron transistor combined with a field-effect transistor displays >5 bit multiswitching behavior at 300 K with a large voltage swing of ～1 V.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 97, 103101 (2010) and may be found at https://dx.doi.org/10.1063/1.3483618
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3483618