Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure

Jinbo, Ryohei; Kudo, Tomohito; Yatabe, Zenji et al.

Thin Solid Films, 2012, 520(17), 5710-5714

Permalink : https://hdl.handle.net/2115/49673

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アクセス権
open access
URI
https://hdl.handle.net/2115/49673
タイトル
Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
著者
Jinbo, Ryohei ; Kudo, Tomohito ; Yatabe, Zenji ; Sato, Taketomo
著者名
Jinbo, Ryohei
著者名
Kudo, Tomohito
著者名
Yatabe, Zenji
e-Rad_Researcher
50343009
著者名
Sato, Taketomo
言語
英語
キーワード
Photoelectric conversion
Porous structure
Indium phosphide (InP)
Platinum
Electrochemical process
Scanning electron microscopy
Optical Reflectance
Current-voltage measurements
Electrochemical method
Current-voltage (I-V)
SEM
発行日
2012-06-30
出版者
Elsevier B.V.
収録物名
Thin Solid Films
巻(号)
520(17)
ページ
5710-5714
抄録
A photoelectric-conversion device-based on an InP porous structure utilizing the large surface area inside pores and the low reflectance on the porous surface-is proposed. The InP walls inside the pores are covered with thin platinum films that form a Schottky barrier yielding an electric field that separates photo carriers generated under illumination. The coverage of the platinum film and its optical reflectance depended largely on the surface morphology of the porous structure. Removal of the irregular top layer formed at the initial stage of the pore formation effectively improved the coverage of the platinum film, which showed a very low optical reflectance (i.e., below 3.2%). According to current-voltage measurements under illumination, the platinum/porous InP showed larger photocurrents and higher responsivity than those of a reference planar sample.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
0040-6090
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1016/j.tsf.2012.04.031