The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure

Kondo, H.; Kaji, H.; Fujii, T. et al.

IOP Conference Series: Materials Science and Engineering, 2010, 8(1), 012034

Permalink : https://hdl.handle.net/2115/49861

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アクセス権
open access
URI
https://hdl.handle.net/2115/49861
タイトル
The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure
著者
Kondo, H. ; Kaji, H. ; Fujii, T. ; Hamada, K. ; Arita, M. ; Takahashi, Y.
著者名
Kondo, H.
著者名
Kaji, H.
著者名
Fujii, T.
著者名
Hamada, K.
e-Rad_Researcher
20222755
著者名
Arita, M.
e-Rad_Researcher
90374610
著者名
Takahashi, Y.
言語
英語
キーワード
Resistance switching memory
ReRAM
Nonvolatile memory
NiO
Binary Metal oxide
発行日
2010
出版者
IOP Publishing
収録物名
IOP Conference Series: Materials Science and Engineering
巻(号)
8(1)
ページ
012034
抄録
The resistive switching of NiO sandwiched between Pt bottom and top electrodes are formed by thermal oxidation at the temperature from 300℃ to 800℃. The ReRAM characteristics are investigated from the view point of practical applications. The stable and uniform formation of NiO films are revealed by XPS analysis and the chemical compositions of NiO are almost independent of oxidation temperatures. However, the forming voltages of the film prepared at higher oxidation temperature are scattered and reach to high values. This fact indicates that the forming process occurs at the weak spot, and the density of the weak spot is low in the film formed at higher temperature. As a result, the NiO prepared at lower temperature shows stable and lower forming voltages.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Published under licence in IOP Conference Series: Materials Science and Engineering by IOP Publishing Ltd.
EISSN
1757-899X
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1088/1757-899X/8/1/012034