Thermoelectric Properties of Zr3Mn4Si6 and TiMnSi2

Suzuki, Ryosuke O.; Kozasa, Hirotake

Journal of Electronic Materials, 2010, 39(9), 2017-2022

Permalink : https://hdl.handle.net/2115/49875

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JEM39-9_2017-2022	pdf	1.26 MB	834

アクセス権	open access
URI	https://hdl.handle.net/2115/49875
タイトル	Thermoelectric Properties of Zr3Mn4Si6 and TiMnSi2
著者	e-Rad_Researcher 80179275 著者名 Suzuki, Ryosuke O.
著者	著者名 Kozasa, Hirotake
言語	英語
キーワード	Thermal conductivity
	silicide
	Seebeck coefficient
	electrical resistivity
	layered structure
発行日	2010-09
出版者	Springer Boston
収録物名	Journal of Electronic Materials
巻(号)	39(9)
ページ	2017-2022
抄録	The Seebeck coefficient, electrical resistivity, and thermal conductivity of Zr3Mn4Si6 and TiMnSi2 were studied. The crystal lattices of these compounds contain relatively large open spaces, and, therefore, they have fairly low thermal conductivities (8.26 and 6.63 Wm^[-1]K^[-1], respectively) at room temperature. Their dimensionless figures of merit ZT were found to be 1.92 × 10^[-3] (at 1200 K) and 2.76 × 10^[-3] (at 900 K), respectively. The good electrical conductivities and low Seebeck coefficients might possibly be due to the fact that the distance between silicon atoms in these compounds is shorter than that in pure semiconductive silicon.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	The final publication is available at www.springerlink.com
PISSN	0361-5235
EISSN	1543-186X
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1007/s11664-009-1019-5