open access

https://doi.org/10.11501/3098906

https://hdl.handle.net/2115/50129

Excitonic Coherent Emission Process in Semiconductors

英語

1994-12-26

Hokkaido University

Coherent emission process of excitons in a layered compound GaSe， and in ZnSe/ZnSo．isSeo．s2 multiple quantum wells has been directly observed for the first time， by means of two independent newly-developed methods； time-resolved Brewster-angle reflectance （TRBR） spectroscopy and time-resolved four-wave-mixing （TRFWM） spectroscopy． In TRBR measurement， we have succeeded in observing a distinct free-induction-decay of coherently-driven polarization， with an oscillatory behavior due to finely split exciton levels． An analysis on the basis of a s imple model provides key information on the dynamical phase relaxation process． The result of the TRFWM measurement gives the comprehensive treatment of two dephasing processes； destructive interference due to static inhomogeneous broadening， and dynamical homogeneous phase relaxation． An analysis of TRFWM intensity enables one to exactly determine the homogeneous phase relaxation time． Finally， we show that a comparison between the coherent emission signal measured by TRBR or TRFWM， and third-order nonlinear correlation profile observed by time integrated FWM measurement enables one to make distinction between which of quantum - or classical interference effect causes the beat feature seen in the coherent emission signal．

1994-12-26

甲第3494号

博士(理学)

博士論文

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