Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition

Takahashi, Makoto; Todorobaru, Makoto; Wakita, Koichi; Uosaki, Kohei

Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition

Takahashi, Makoto; Todorobaru, Makoto; Wakita, Koichi et al.

Applied Physics Letters, 2002, 80(12), 2117-2119

Permalink : https://hdl.handle.net/2115/50230

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アクセス権	open access
URI	https://hdl.handle.net/2115/50230
タイトル	Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition
著者	Takahashi, Makoto ; Todorobaru, Makoto ; Wakita, Koichi ; Uosaki, Kohei
著者名 Takahashi, Makoto
著者名 Todorobaru, Makoto
著者名 Wakita, Koichi
e-Rad_Researcher 20133697 著者名 Uosaki, Kohei
言語	英語
キーワード	cadmium compounds
	II-VI semiconductors
	semiconductor epitaxial layers
	semiconductor growth
	pulsed laser deposition
	electrodeposits
	liquid phase epitaxial growth
	photoluminescence
	atomic force microscopy
	excitons
	surface states
	surface structure
発行日	2002-03-25
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	80(12)
ページ	2117-2119
抄録	Highly oriented CdTe(111) films of high-crystalline quality were grown on a Si(111) substrate by pulsed-light-assisted electrodeposition at room temperature. Strong photoluminescence peaks due to the bound exciton recombination were observed for the electrodeposited CdTe films, confirming the high quality of the films prepared by the present method. Atomic-force microscopy measurements showed an atomically ordered arrangement and demonstrated the epitaxial growth of the CdTe films.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 80, 2117 (2002) and may be found at https://dx.doi.org/10.1063/1.1463718
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1463718